| PART |
Description |
Maker |
| S29GL032M10BBIR10 S29GL032M10BBIR12 S29GL032M10BBI |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142-EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
|
Spansion, Inc.
|
| AT49F008-90TI AT49F008 AT49F008-12TC AT49F008-12TI |
8-Megabit 1M x 8 5-volt Only Flash Memory 1M X 8 FLASH 5V PROM, 120 ns, PDSO40
Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket 1M X 8 FLASH 5V PROM, 150 ns, PDSO40
8-Megabit 5-volt Only Flash Memory
|
Atmel, Corp.
ATMEL[ATMEL Corporation]
|
| AT49BV2048 |
2-Megabit 3-volt Only Flash Memory(2M浣?3V???瀛???ī
2M bit. 2.7-Volt Read and 2.7-Volt Write. Byte-Write Flash. Bottom Boot
|
Atmel Corp.
|
| S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
|
Spansion, Inc.
SPANSION LLC
|
| AT49LV2048A AT49BV2048A AT49LV2048A-70TC AT49LV204 |
2M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
2M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
|
Atmel
|
| AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
ETC
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| S29GL128P90TFCR10 S29GL512P10TFIR20 S29GL256P90FAI |
128M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
512M X 1 FLASH 3V PROM, 100 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 90 ns, PBGA64
256M X 1 FLASH 3V PROM, 90 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
1G X 1 FLASH 3V PROM, 110 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
256M X 1 FLASH 3V PROM, 90 ns, PDSO56 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 110 ns, PBGA64
1G X 1 FLASH 3V PROM, 110 ns, PBGA64 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 512M X 1 FLASH 3V PROM, 110 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 256M X 1 FLASH 3V PROM, 100 ns, PBGA64
128M X 1 FLASH 3V PROM, 100 ns, PBGA64
1G X 1 FLASH 3V PROM, 120 ns, PDSO56
1G X 1 FLASH 3V PROM, 130 ns, PDSO56
1G X 1 FLASH 3V PROM, 120 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1
PCB COPPER CLAD 6X9 1/32 2-SIDE
DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
| AT49SV802A-90TI AT49SV802A-90CU |
8-megabit 1.8-volt Only Flash Memory 8兆位1.8伏，只有闪存
8-megabit 1.8-volt Only Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
|
Atmel, Corp.
ATMEL Corporation
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
|
